退火(玻璃)
无定形固体
分析化学(期刊)
材料科学
薄膜
非晶硅
傅里叶变换红外光谱
溅射
硅
溅射沉积
氢
化学工程
复合材料
结晶学
化学
晶体硅
冶金
纳米技术
工程类
有机化学
色谱法
作者
Ricardo Rüther,John Livingstone
标识
DOI:10.1016/0040-6090(94)90836-2
摘要
The infrared absorption features of sputter-deposited amorphous silicon (a-Si:H) thin films prepared under different substrate temperatures ( T s ) and an in-chamber annealing treatment were analysed as a function of anneling temperatures ranging from 200 to 600°C. Fourier-transform infrared absorption spectroscopy and scanning electron microscopy were used to analyse the evolution of film characteristics after annealing. Hydrogen bonding configurations for higher T s , in-chamber annealed samples showed a higher proportion of monohydride grouping, and further annealing steps revealed that hydrogen is much more tightly bonded under these deposition conditions than when T s is lower and the in-chamber annealing treatment not used. Oxygen and nitrogen contamination, both during and after deposition, have also been found to be reduced when samples were in-chamber annealed. Samples deposited at low T s and not in-chamber annealed showed the same surface damage as samples prepared at higher T s and which were then annealed at temperatures starting at 300°C, indicating a high degree of stress, probably caused by an excessive hydrogen concentration in films prepared at lower T s .
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