溅射
等离子体
蚀刻(微加工)
感应耦合等离子体
等离子体刻蚀
分析化学(期刊)
材料科学
反应离子刻蚀
化学
图层(电子)
薄膜
纳米技术
物理
量子力学
色谱法
作者
L. Zhang,L. F. Lester,R. J. Shul,C. G. Willison,Richard P. Leavitt
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:1999-05-01
卷期号:17 (3): 965-969
被引量:25
摘要
Inductively coupled plasma (ICP) etching characteristics of GaSb and AlGaAsSb have been investigated in BCl3/Ar and Cl2/Ar plasmas. The etch rates and selectivity between GaSb and AlGaAsSb are reported as functions of plasma chemistry, ICP power, rf self-bias, and chamber pressure. It is found that physical sputtering desorption of the etch products plays a dominant role in BCl3/Ar ICP etching, while in Cl2/Ar plasma, the chemical reaction dominates the etching. GaSb etch rates exceeding 2 μm/min are achieved in Cl2/Ar plasmas with smooth surfaces and anisotropic profiles. In BCl3/Ar plasmas, etch rates of 5100 and 4200 Å/min are obtained for GaSb and AlGaAsSb, respectively. The surfaces of both GaSb and AlGaAsSb etched in BCl3/Ar plasmas remain smooth and stoichiometric over the entire range of plasma conditions investigated. This result is attributed to effective removal of etch products by physical sputtering. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb is close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based midinfrared laser diodes.
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