Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors

Surface passivation has been recognized as a crucial step in the fabrication of mercury cadmium telluride photoconductive as well as photovoltaic detectors. The subject has attracted considerable attention in the past and several reviews existed by 1991. The subject matter, however, received added impetus with the development of techniques like MOCVD and MBE and recently there has been considerable work on MCT passivation using in situ grown II-VI semiconductors. In this report, we have tried to give the present status and identify the issues particularly with reference to the recent work on the subject.