原子层沉积
环戊二烯基络合物
锆
材料科学
结晶度
电介质
四方晶系
薄膜
单斜晶系
分析化学(期刊)
沉积(地质)
晶体结构
化学
结晶学
纳米技术
冶金
复合材料
有机化学
光电子学
催化作用
古生物学
沉积物
生物
作者
Dong Chan Won,Shi‐Woo Rhee
出处
期刊:Journal of vacuum science and technology
[American Vacuum Society]
日期:2013-10-11
卷期号:32 (3)
被引量:11
摘要
The authors investigate the deposition of ZrO2 by atomic layer deposition (ALD) process using tris(dimethylamino) cyclopentadienyl zirconium (Cp-Zr) as a precursor, and the effect of deposition temperature on the structural and electrical properties of ZrO2 thin films are studied. The ALD process window of Cp-Zr is found at 300–350 °C, and no noticeable change in the film composition occurs within the ALD process window and the films are all stoichiometric. However, the crystallinity of the film is significantly affected by the deposition temperature. At 300 °C, only the cubic and tetragonal phases are detected, while the monoclinic peak starts to appear at 325 °C. Consequently, the highest dielectric constant (35.8) is observed for the ZrO2 films deposited at 300 °C. In contrast, ZrO2 films deposited at 350 °C show the lowest leakage current. This trend is due to the lower carbon impurity contents along with the increase in deposition temperature. To study the electrical properties of ZrO2 films in more detail, capacitance–voltage hysteresis measurements are carried out; the hysteresis is reduced abruptly with an increase in deposition temperature.
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