过渡金属
硫族元素
插层(化学)
电子能带结构
凝聚态物理
材料科学
费米能级
原子轨道
Atom(片上系统)
范德瓦尔斯力
态密度
电子结构
密度泛函理论
费米能量
带隙
电子
结晶学
化学
物理
计算化学
无机化学
分子
生物化学
嵌入式系统
计算机科学
催化作用
有机化学
量子力学
作者
M. Inoue,H. P. Hughes,A. D. Yoffe
标识
DOI:10.1080/00018738900101142
摘要
Abstract The introduction of 3d transition metals (M) into the van der Waals gaps between the weakly coupled layers of transition metal dichalcogenides TX2 (T:transition metal, X:chalcogen) produces an interesting family of intercalation compounds, M x TX2, the physical properties of which are different from those of the host TX2 matrix because of 'host-guest' interactions. In this article we shall review the salient features of the M x TiS2 family with the simple 1T-CdI2 type layered structure, which have been extensively studied by structural, transport, specific heat and lattice dynamic, magnetic and photoemission spectroscopic measurements. In contrast with the previously reported series of intercalation complexes of the Group V transition metal dichalcogenides, a characteristic of the M x TiS2 materials is strong hybridisation between the guest atom M 3d orbitals and the host Ti 3d and S 3p orbitals, leading to changes in the Fermi energy E F of the conduction band, the density of states at E F and various types of magnetic orderings. These properties are understood in terms of an itinerant electron or band picture for the intercalant, rather than a rigid band or localised model. Additional informationNotes on contributorsA.D. Yoffe On leave of absence from the Department of Materials Science, Faculty of Science, Hiroshima University, Hiroshima 730, Japan.
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