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Basic research on chemical mechanical polishing of single-crystal SiC—Electro–Fenton: Reaction mechanism and modelling of hydroxyl radical generation using condition response modelling

抛光 阳极 化学 激进的 羟基自由基 Crystal(编程语言) 反应机理 阴极 催化作用 分析化学(期刊) 化学工程 材料科学 电极 物理化学 冶金 色谱法 有机化学 计算机科学 程序设计语言 工程类
作者
Jiayun Deng,Jiabin Lu,Qiusheng Yan,Jisheng Pan
出处
期刊:Journal of environmental chemical engineering [Elsevier BV]
卷期号:9 (2): 104954-104954 被引量:43
标识
DOI:10.1016/j.jece.2020.104954
摘要

Hydroxyl radicals (·OH) can effectively oxidise and corrode single-crystal SiC, and are used for chemical mechanical polishing (CMP). The generation rate of ·OH and its total concentration produced by a CMP process based on the Electro-Fenton reaction can be effectively controlled by regulating the electric field parameters, thereby improving the polishing effect of SiC. The effects of initial H 2 O 2 concentration, Fe 3 O 4 concentration, and voltage on ·OH were studied, and the reaction mechanism was also revealed. Moreover, a conditional-response mathematical model for ·OH generation was established. The generated ·OH first increased and then decreased with increasing initial H 2 O 2 concentration, Fe 3 O 4 concentration, and voltage. When these parameters were 7.5 wt%, 1.5 wt% and 0.75 V, respectively, a maximum total ·OH concentration of 9545.776 μmol could be obtained. The conditional-response mathematical model established with initial H 2 O 2 concentration, Fe 3 O 4 concentration, and voltage can accurately predict the total generated ·OH concentration with a relative prediction error of less than 10%. Controlling the electric field parameters can accelerate the conversion of Fe 3+ to Fe 2+ , increasing Fe 2+ concentration and enhancing catalytic effect. On the other hand, it also generates a small amount of H 2 O 2 in situ on the cathode, which slows down H 2 O 2 consumption. Furthermore, the Pt anode oxidises water to generate a small amount of ·OH. These combined effects promote ·OH generation. Additionally, the total ·OH concentration achieved in this work was 48.69% greater than that produced by the Fenton reaction. This indicates that applying the Electro-Fenton reaction to CMP of SiC improves the polishing effect. • Reaction mechanism of Electro-Fenton reaction was revealed. • Contribution of voltage to Electro-Fenton reaction was studied. • Total ·OH concentration increased by 48.69% in Electro-Fenton than Fenton reaction. • Conditional-response model for ·OH with error of 10% was established and verificated.
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