压电响应力显微镜
铁电性
单层
材料科学
范德瓦尔斯力
极化(电化学)
纳米技术
扫描隧道显微镜
凝聚态物理
异质结
多铁性
平面的
光电子学
化学
物理
电介质
计算机科学
物理化学
分子
有机化学
计算机图形学(图像)
作者
Kai Chang,Felix Küster,Brandon J. Miller,Jing‐Rong Ji,Jialu Zhang,Paolo Sessi,Salvador Barraza‐Lopez,S. Parkin
出处
期刊:Nano Letters
[American Chemical Society]
日期:2020-08-18
卷期号:20 (9): 6590-6597
被引量:200
标识
DOI:10.1021/acs.nanolett.0c02357
摘要
Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and non-volatile electronic devices based on vertical and co-planar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene, and the demonstration of controlled room temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which is difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.
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