焦耳加热
莫特绝缘子
绝缘体(电)
金属-绝缘体过渡
电阻式触摸屏
材料科学
纳米线
兴奋剂
热的
凝聚态物理
纳米技术
电场
光电子学
工程物理
物理
电气工程
金属
复合材料
气象学
工程类
冶金
量子力学
作者
Yoav Kalcheim,Alberto Camjayi,Javier del Valle,Pavel Salev,Marcelo Rozenberg,Iván K. Schuller
标识
DOI:10.1038/s41467-020-16752-1
摘要
Abstract Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and brain-inspired technology. Despite this, the roles of electric field and Joule heating in the switching process remain controversial. Using nanowires of two archetypal Mott insulators—VO 2 and V 2 O 3 we unequivocally show that a purely non-thermal electrical IMT can occur in both materials. The mechanism behind this effect is identified as field-assisted carrier generation leading to a doping driven IMT. This effect can be controlled by similar means in both VO 2 and V 2 O 3 , suggesting that the proposed mechanism is generally applicable to Mott insulators. The energy consumption associated with the non-thermal IMT is extremely low, rivaling that of state-of-the-art electronics and biological neurons. These findings pave the way towards highly energy-efficient applications of Mott insulators.
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