Bend‐Resistant Flexible Quantum Dot Light‐Emitting Diodes by Polymer‐Assisted Photocrosslinking

ABSTRACT The nanocrystal emissive layer (EML) of flexible quantum dot light‐emitting diodes (FQLEDs) is prone to displacement and aggregation under repeated bending, which results in severe device performance degradation. Herein, we introduce a photo‐crosslinkable p‐type semiconducting polymer to construct a mechanically robust EML. QDs are spatially confined within the crosslinked polymer network, significantly enhancing the mechanical stability of the devices (retaining 83.6% of the initial luminance after 10 000 bending cycles). More importantly, the surrounding polymer modulates carrier behavior by suppressing excessive electron injection while promoting efficient hole injection into the QDs. Consequently, the FQLED devices achieve a high external quantum efficiency of 24% and current efficiency of 32.5 cd/A. This strategy provides a facile and universal pathway for fabricating highly efficient and stable FQLEDs.