An Analytical Model of Transient Response of MEMS under High-G shock for Reliability Assessment

The assessment of the reliability of MEMS under high-g shock has been challenging and primarily relied on experiments. In this paper, we proposed an analytical model that more accurately described the transient response of MEMS under high-g shock than the currently adopted half-sine description of shock load in the industrial testing standards. Furthermore, we proposed a reliability index β to assess the threshold of the shock amplitude that MEMS structures could survive with the vibrating and fading features of the shock considered. The numerical results based on the shock response spectrum (SRS) analysis have shown excellent accuracy of our proposed model of ours. The index β revealed that the reliability of MEMS structure could be significantly lower under a shock of short duration than it under quasi-static acceleration impulse.