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Single atom doping in 2D layered MoS2 from a periodic table perspective

扫描隧道显微镜 掺杂剂 扫描透射电子显微镜 纳米技术 悬空债券 兴奋剂 化学物理 材料科学 石墨烯 Atom(片上系统) 化学 光电子学 凝聚态物理 透射电子显微镜 嵌入式系统 物理 计算机科学
作者
Saeed Sovizi,Robert Szoszkiewicz
出处
期刊:Surface Science Reports [Elsevier BV]
卷期号:77 (3): 100567-100567 被引量:44
标识
DOI:10.1016/j.surfrep.2022.100567
摘要

Molybdenum Disulfide (MoS2) is a well-known transition metal dichalcogenide with a hexagonal structure arrangement analogous to graphene. Two dimensional (2D) MoS2 has attracted wide attention in various applications such as energy storage, catalysis, sensing, energy conversion and optoelectronics due to its unique properties including tunable bandgap, substantial carrier mobility, outstanding mechanical strength and dangling-bond free basal surface. Moreover, MoS2 has shown an excellent capability to be a host for foreign atoms which tune its physicochemical properties. Herein, currently known structural changes in the MoS2 crystals introduced by various single atom dopants coming from all over the chemical table of elements are reviewed. Accompanying electrical, optical and magnetic properties of such structures are discussed in detail. Potential applications of the doped MoS2 are introduced briefly as well. The review concentrates on the recent state-of-the-art results obtained mostly by the high resolution scanning transmission electron microscopy (STEM), such as high angle annular dark field (HAADF) imaging as well as scanning probe microscopy (SPM) such as scanning tunneling microscopy (STM). These techniques have been used to decipher dopant positions and other sub-atomic structural changes introduced to the MoS2 structure by isolated dopants.
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