氮化镓
碳化硅
材料科学
功率(物理)
电气工程
集成电路
晶体管
计算机科学
光电子学
电压
工程类
纳米技术
物理
图层(电子)
量子力学
冶金
作者
Asif Imran Emon,Hayden Carlton,John L. Harris,Alexis Krone,Mustafeez Hassan,Abdul Basit Mirza,Maksudul Hossain,Arman Ur Rashid,Yuxiang Chen,Fang Luo,David Huitink,Alan Mantooth
出处
期刊:IEEE Transactions on Transportation Electrification
日期:2022-12-01
卷期号:8 (4): 4391-4407
被引量:5
标识
DOI:10.1109/tte.2022.3173585
摘要
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are excellent power semiconductor devices due to their superior material properties compared to their silicon (Si) counterparts. It has demonstrated a fast switching speed with high dV/dt, enabling the designer to push the switching frequency toward the MHz range. However, traditional wire-bonded packaging becomes a limiting factor in fully harnessing the benefits offered by these advanced power devices, as it is likely to introduce voltage overshoot, oscillation, parasitic turn-on, and electromagnetic interference (EMI) issues; thus, improved and advanced packaging structures are a must to bridge the gap. Besides, the unique electrical behavior and footprint of GaN compared to Si and Si carbide make them have different requirements for power module integration. To seek a viable solution, a globally optimized double-sided cooled, gate driver integrated 650-V/60-A GaN half-bridge power module is presented herein. The proposed 3-D integrated hybrid solution delivers an optimized package, having power loop inductance and thermal resistance as low as 0.91 nH and $0.38~^{\circ }\text{C}$ /W, respectively, which is verified using simulation and experimental results. The overall utility of the design improved proportionately by introducing simple, yet effective electrical/thermal codesign approaches, which can be applied to future power modules, designed for separate applications.
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