材料科学
离子键合
氧气
空位缺陷
兴奋剂
相变
二氧化二钒
化学物理
相(物质)
氧化物
过渡金属
氧化钒
格子(音乐)
结晶学
复合氧化物
纳米技术
工作(物理)
离子
钒
无机化学
转化(遗传学)
可变距离跳频
离子半径
氧气储存
金属-绝缘体过渡
离子电导率
锂(药物)
凝聚态物理
作者
Xuanchi Zhou,Xiaohui Yao,Xiaomei Qiao,Jiahui Ji,Guowei Zhou,Huihui Ji,Xiaohong Xu
出处
期刊:Small
[Wiley]
日期:2025-12-15
卷期号:22 (8): e10736-e10736
标识
DOI:10.1002/smll.202510736
摘要
Controlling the insulator-metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for unlocking exotic structural transformation and physical functionality. Oxygen vacancies serve as a powerful tuning knob for adjusting the IMT property of VO2, though driving topochemical reduction to V2O3 remains rather challenging due to structural incompatibility and competing phase instability. Here, a consecutive oxygen-vacancy-driven VO2-VO2-x-V2O3 topotactic phase transformation route is demonstrated with pronounced facet-dependent anisotropy, engendering widely tunable IMT properties across an extended temperature range over 200 K. Remarkably, topochemically reduced V2O3 inherits the crystallographic characteristics from parent VO2, enabling the possibility of accessing exotic lattice framework with tunable IMT behaviors. Analogous electron doping arising from hydrogenation and oxygen vacancies contributes cooperatively to drive Mott phase transition in VO2 through band-filling control, while ionic interactions between protons and oxygen vacancies markedly accelerate the oxygen ionic mobility. The work not only establishes a framework for engineering physical functionality through defect-mediated topotactic transition and band filling but also provides fundamentally new insights for filling-controlled Mott physics.
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