Optimizing the performance of the thermal transistor based on negative differential thermal resistance

Thermal transistors have significant potential in thermal management due to their ability to precisely control the heat fluxes. However, the current design has a limited working temperature range and cannot meet the demand for heat control. In this work, we optimize the performance of a thermal transistor based on negative differential thermal resistance using a modified Lorentz gas model, focusing on the effects of gate control and thermal conductance. We find that the control of the gate has an asymmetrical property, and the sufficient control can expand the working region by more than 1.5 times. In addition, the switching and amplifying functions of the thermal transistor are inversely dependent on thermal conductance, and an increase in thermal conductance can lead to a 27 times amplification in heat flux. The synergistic regulation of the two factors results in the optimal performance of a 44% working region and a 33 times amplification in heat flux. These findings refresh the understanding of the performance limits of thermal transistors, promoting efficient thermal management and addressing heat dissipation issues.