Enhanced Spontaneous Emission from GaAs Quantum Wells with Monolithic Optical Microcavities
作者
H. Yokoyama,K. Nishi,Takayoshi ANAN,Hideaki Yamada
标识
DOI:10.1364/qwoe.1989.md4
摘要
To date, several experiments have demonstrated the alteration of materials’ spontaneous emission rate in cavities1-3). Altering the spontaneous emission is also interesting from the device point of view. For example, Kobayashi et al. proposed the concept of a thresholdless laser with the full confinement of spontaneously emitted photons in closed microcavities4).