材料科学
复合材料
微电子
薄膜
成核
断裂(地质)
缩进
扩展有限元法
硅
基质(水族馆)
纳米压痕
断裂韧性
断裂力学
有限元法
结构工程
纳米技术
热力学
光电子学
海洋学
物理
地质学
工程类
作者
Xiuhuai Xie,Qinkai Feng,Miao Zhang,Naiman Liao
标识
DOI:10.1016/j.engfracmech.2023.109648
摘要
Silicon oxycarbide (SiCO) thin films with unique nano-domain structure show various functional properties and high-temperature stability, and the mechanical property at the interface between SiCO and substrate is one of the critical issues for enhancing reliabilities of microelectronic thin-film devices. In this work, the fracture properties and interfacial strengths of SiCO thin films are investigated by experiments and extended finite element (XFEM) method. The elastic and plastic properties of the SiCO/substrate interfaces are obtained by fitting the XFEM calculated P-h curves with those from nano-indentation experiments, fracture toughnesses and energy release rates are obtained to improve the description of interfacial crack nucleation and propagation. Then the properties are used as the inputting parameters of XFEM model for scratch simulations, and the critical loads for evaluating interfacial strength are achieved. The calculated critical loads are comparable to the results of experimental scratch, and the influences of layer thickness on interfacial strength of SiCO thin-film are nicely predicted.
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