材料科学
光电子学
核工程
工程物理
物理
工程类
作者
Tao Gao,Ao Zhang,Li Chen,Jingmin Li,Chong Liu
标识
DOI:10.1016/j.apradiso.2024.111543
摘要
This study presents a design of a 3D interface simulation model featuring an inverted pyramid structure. Our objective is to forecast the performance of GaN-based betavoltaic nuclear batteries with the PN junction 3D interface structures comparing a practical machining process. Initially, we computed the electron-hole pairs (EHPs) generation rate in GaN materials irradiated by both
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