材料科学
过渡金属
GSM演进的增强数据速率
光电发射光谱学
光谱学
金属
X射线光电子能谱
纳米技术
光电子学
工程物理
计算机科学
物理
核磁共振
电信
冶金
化学
量子力学
生物化学
催化作用
作者
Archit Dhingra,Dmitri E. Nikonov,Alexey Lipatov,Alexander Sinitskii,P. A. Dowben
标识
DOI:10.1557/s43578-022-00744-6
摘要
Abstract Transition metal trichalcogenides (TMTs) are two-dimensional (2D) systems with quasi-one-dimensional (quasi-1D) chains. These 2D materials are less susceptible to undesirable edge defects, which enhances their promise for low-dimensional optical and electronic device applications. However, so far, the performance of 2D devices based on TMTs has been hampered by contact-related issues. Therefore, in this review, a diligent effort has been made to both elucidate and summarize the interfacial interactions between gold and various TMTs, namely, In 4 Se 3 , TiS 3 , ZrS 3 , HfS 3 , and HfSe 3 . X-ray photoemission spectroscopy data, supported by the results of electrical transport measurements, provide insights into the nature of interactions at the Au/In 4 Se 3 , Au/TiS 3 , Au/ZrS 3 , Au/HfS 3 , and Au/HfSe 3 interfaces. This may help identify and pave a path toward resolving the contemporary contact-related problems that have plagued the performance of TMT-based nanodevices. Graphical abstract I – V characteristics of (a) TiS3, (b) ZrS3, and (c) HfS3
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