能量转换效率
限制
开路电压
串联
太阳能电池
材料科学
光电子学
重组
硫黄
空位缺陷
锑
硫化物
电压
化学
物理
凝聚态物理
工程类
复合材料
基因
冶金
机械工程
量子力学
生物化学
作者
Xinwei Wang,Seán R. Kavanagh,Aron Walsh
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2024-12-16
卷期号:10 (1): 161-167
被引量:1
标识
DOI:10.1021/acsenergylett.4c02722
摘要
Antimony sulfide (Sb2S3) is a promising candidate as an absorber layer for single-junction solar cells and the top subcell in tandem solar cells. However, the power conversion efficiency of Sb2S3-based solar cells has remained stagnant over the past decade, largely due to trap-assisted nonradiative recombination. Here we assess the trap-limited conversion efficiency of Sb2S3 by investigating nonradiative carrier capture rates for intrinsic point defects using first-principles calculations and Sah–Shockley statistics. Our results show that sulfur vacancies act as effective recombination centers, limiting the maximum light-to-electricity efficiency of Sb2S3 to 16%. The equilibrium concentrations of sulfur vacancies remain relatively high, regardless of growth conditions, indicating the intrinsic limitations imposed by these vacancies on the performance of Sb2S3.
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