莫特绝缘子
电导率
凝聚态物理
接口(物质)
材料科学
物理
量子力学
复合材料
毛细管数
毛细管作用
作者
I. V. Maznichenko,S. Ostanin,D. Maryenko,V. K. Dugaev,E. Ya. Sherman,P. Buczek,Ingrid Mertig,M. Kawasaki,A. Ernst
标识
DOI:10.1103/physrevlett.132.216201
摘要
Intriguingly, conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here, we address the (001), (110), and (111) interfaces between the LaTiO_{3} Mott, and large band gap KTaO_{3} insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wideband insulators. Here, the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO_{3} and LaTiO_{3} which, due to a small gap in the LaTiO_{3} results in its sensitivity to the crystal structure, yields metallization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO_{3}/KTaO_{3} (110) where the "polar" arguments are not applicable and on the emergence of superconductivity in these structures.
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