Reliability and Accuracy of a Qualified Split-Gate Flash In-Memory Compute Technology

A 28 nm split-gate flash in-memory compute technology is evaluated for reliability and accuracy. SST’s Embedded SuperFlash^®, ESF3, memory cell developed for analog compute shows low inference loss and < 2.5% cell distribution widening following 1000 hours high temperature life stresses and endurance cycling. Subthreshold cell current operation of the cell has good immunity to both write and read disturbs.