MEMS Gas Sensor Based on ZnCu-Based Oxide Semiconductors for H2S Detection

In this work, a hydrogen sulfide (H2S) MEMS sensor is designed by using the novel ZnCu-based oxide semiconductors derived from metal-organic frameworks. Different gas sensitization ways were established by heteroatom doping and heterogeneous interface construction. The results show the sensor based on CuO/ZnO semiconductors shows the unstable recovery behavior because of multiple interface formation after H2S adsorption and reaction. However, the ZnCu-MOS-3 (Cu-doped ZnO) gas sensors demonstrate the great gas sensing performance for H2S, featuring high response (16.19 for 20 ppm H2S), fast response speed (33 s), and the ability to recover autonomously. In addition, a H2S alarming platform is designed for preventing the human body from being poisoned. This work paves the way for the rational design of efficient gas sensors to monitor environmental H2S concentrations.