Facet‐Engineered (100)‐Oriented MoO 2 Nanoribbons for Broadband Self‐Powered Photodetection

光探测 响应度 材料科学 异质结 光电子学 化学气相沉积 基质(水族馆) 红外线的 纳米技术 光电探测器 光学 海洋学 物理 地质学
作者
Haojian Lin,Ximiao Wang,Tianrong Yi,Jidong Liu,Jiahao Wu,Shaojing Liu,Yang Chai,Liu Fei,Di Wu,Huanjun Chen,Wenjing Zhang
出处
期刊:Advanced Science [Wiley]
卷期号:12 (43): e10753-e10753 被引量:4
标识
DOI:10.1002/advs.202510753
摘要

Abstract Broadband photodetection plays a vital role in aerospace applications, biomedical imaging, and advanced communication systems. While molybdenum dioxide (MoO 2 ) exhibits exceptional electrical conductivity, carrier mobility, and environmental stability, its potential for photodetection has remained unrealized, with existing literature reporting negligible optoelectronic responses. Here, we unlock latent photoresponsivity of MoO 2 by facet engineering, demonstrating that exposing the (100) crystallographic plane activates its intrinsic photoelectric conversion. Using atmospheric‐pressure chemical vapor deposition, we successfully fabricated large‐area arrays of (100)‐oriented MoO 2 nanoribbons. The resulting flexible photodetector on polyethylene glycol terephthalate (PET) substrate exhibits unprecedented performance, achieving broadband detection from visible to long‐wave infrared (LWIR: 0.5–10.5 µm) range without external bias. The device demonstrates a fivefold enhancement in responsivity compared to rigid substrate configurations, reaching 107.31 mA W −1 at 10.5 µm wavelength with an exceptionally low noise‐equivalent power ( NEP ) of 6.64 pW Hz −0.5 , surpassing all self‐powered photodetectors reported to date. Comprehensive characterization reveals distinct photoresponse mechanisms: photothermoelectric effects dominate on silicon substrates, while photobolometric behavior prevails in flexible configurations. These findings not only resolve the previously observed photoresponse limitations in MoO 2 but also establish facet engineering as a general approach for developing high‐performance photodetectors based on metallic oxides, with significant implications for flexible optoelectronic applications.
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