Highly Efficient and Stable SnO2-Based Inverted Organic Solar Cells Modified with a Simple Small Molecule Exceeding 19% Efficiency

材料科学 有机太阳能电池 三元运算 钝化 能量转换效率 工作职能 分子 量子效率 化学物理 离解(化学) 活动层 小分子 光伏系统 激子 纳米技术 阴极 下降(电信) 氧化物 聚合物太阳能电池 化学工程 工作(物理) 电子 电子传输链 有机半导体 光电子学 热稳定性 化学稳定性 氧化锡 电极 分子物理学 最大功率原理 平面的 量子点 重组 氧化铟锡 电池(电)
作者
Yumeng Li,Jifa Wu,Feng Tang,Xinkang Wang,Jinping Lei,Xiaobin Peng
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:17 (39): 54991-55002
标识
DOI:10.1021/acsami.5c15187
摘要

A conventional cathode interlayer (CIL) material commonly employed in organic light-emitting diodes, namely, bathocuproine (BCP), was strategically utilized to functionalize the tin oxide (SnO2) electron transport layer (ETL) within inverted organic photovoltaic devices. Both theoretical quantum chemical calculations and empirical experimental investigations consistently confirm the existence of interfacial interaction between BCP and tin oxide (SnO2), effectively reducing the work function of SnO2, improving its electrical conductivity, and filling some defects on the SnO2 surface, thereby reducing the charge recombination and enhancing exciton dissociation and charge transport in inverted organic solar cells (OSCs). As results, the power conversion efficiencies (PCEs) based on BCP-modified devices are improved from 15.24% to 16.94% (PM6:Y6) and 18.77% (PM6:L8-BO), and that of the ternary OSCs (D18:L8-BO:BTP-eC9) is even up to 19.13%, which are among the highest efficiencies for inverted OSCs. Additionally, SnO2/BCP devices show excellent stability (storage stability, light stability, thermal stability, humid stability and UV stability), and in maximum power point tracking tests, the T80 (the lifetime of PCE decay to 80% of its initial efficiency) of SnO2/BCP devices exceeds 500 h, which is remarkable improvement compared to that of 63 h of SnO2 devices. The improved PCEs and stability can be mainly ascribed to the passivation of the defects on SnO2 by BCP due to the interactions between the N atoms of BCP and Sn atoms of SnO2, and the better contact of SnO2/BCP ETLs with the active layers also plays positive roles for the enhanced device performance.
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