Research progress on ferroelectric material-integrated optoelectronic detection systems

The optical communication system is an important part of the front-end information collection of the Internet of Things, and the photodetectors (PDs) are the key component of the system. Currently, researchers continue to explore the development path of high-performance PDs by using structural design, energy band engineering, and other technologies. However, devices still face challenges such as high dark current and low light absorption efficiency. The performance of PDs depends not only on the device structures but also on optoelectronic materials. Therefore, the development of novel optoelectronic materials and modulation mechanisms is imperative. Ferroelectric materials have attracted more and more attention because of their advantages, such as controllable polarization coordination, simple structure, and stable response characteristics. Spontaneous polarization occurs in ferroelectric materials due to the breaking of crystal symmetry. In this review, the structural and polarization characteristics of ferroelectric materials and their applications in photodetection are described in detail: the hybrid perovskite ferroelectrics open up new opportunities for high-performance PDs. Ultrathin two-dimensional (2D) ferroelectrics with high dielectric constants are used as channel or gate materials in transistors, laying the foundation for device miniaturization. Organic ferroelectric materials with both transparency and flexibility provide the material basis for the flexible device design. Moreover, the control mechanisms of ferroelectric-optoelectronic hybrid systems in photodetection are discussed and summarized. Ferroelectric fields effectively regulate the band bending of optoelectronic semiconductors, which confirms the possibility of ferroelectricity-modulating the interface band. A local electrostatic field generated by programmed ferroelectric domains flexibly controls carrier transport in optoelectronic functional layers. In addition, the synergistic effect of ferroelectric fields and built-in electric fields has also proved to be an effective design strategy for optimizing device performance. The introduction of ferroelectric materials into photodetectors has been proven to be effective in reducing the dark current, broadening the response wavelength, and speeding up the response time. Ferroelectric material-integrated PDs have shown significant advantages. Despite extensive research on ferroelectric materials and their properties, challenges remain in their application to photodetection systems. Polarization fatigue in ferroelectric materials over time leads to performance degradation, limiting the stability and reliability of integrated devices. Reducing ferroelectric materials to critical dimensions causes crystal structure symmetry changes, weakening or eliminating ferroelectricity, thus challenging the compatibility between device performance and miniaturization. Good interface contact is a key factor affecting device performance, imposing higher requirements on the integration process of ferroelectric materials and optoelectronic semiconductors. These challenges highlight the importance and necessity of continuous research and development in the field of ferroelectric-integrated photodetection systems. With the ongoing discovery of novel ferroelectric materials and modulation mechanisms, ferroelectric-integrated PDs are poised to drive rapid advancements in high-speed information processing, low-power intelligent sensing, and other cutting-edge fields.