材料科学
制作
能量转换效率
钙钛矿(结构)
带隙
热稳定性
化学工程
光电子学
纳米技术
图层(电子)
医学
工程类
病理
替代医学
作者
Long Zhang,Xing Guo,Zhenhua Lin,Jing Ma,Jie Su,Zhaosheng Hu,Chunfu Zhang,Shengzhong Liu,Yue Hao
出处
期刊:Nano Energy
[Elsevier]
日期:2019-06-01
卷期号:60: 583-590
被引量:136
标识
DOI:10.1016/j.nanoen.2019.03.081
摘要
All-inorganic perovskite CsPbI2Br has received much attention recently due to its suitable bandgap and excellent thermal stability. Herein, we demonstrated a low temperature solution process to obtain high quality CsPbI2Br films and fabricate devices with a facile n-i-p structure (ITO/SnO2/CsPbI2Br/Spiro-OMeTAD/MoO3/Ag), in which MoO3 was introduced as interfacial layer that led to high efficient charge extraction and suppressed carrier recombination. As a result, the champion cells exhibited a relatively high power conversion efficiency of 14.05% and superb fill factor of 81.5%. More importantly, unencapsulated PSCs with MoO3 interfacial layers showed outstanding stabilities with retaining 80% of initial PCE with thermal treatment at 85 °C for 140 min in ambient air, 80% of initial PCE under continuous illumination for 120 min in ambient air, and 89% of initial PCE after being stored in N2 glove-box over 60 days. Meantime, it should be mentioned that all interlayers and active layer were processed at temperature below 160 °C, and hence, this fabrication technique is promising for flexible energy devices and future commercialization.
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