期刊:European Conference on Optical Communication日期:2018-09-01卷期号:: 1-3被引量:3
标识
DOI:10.1109/ecoc.2018.8535465
摘要
We fabricated waveguide germanium photodetectors (Ge-PDs) using silicon photonics technology at a commercial CMOS foundry. The fabricated Ge-PDs exhibited low dark current, high responsivity (1.1 A/W) and 40-GHz O/E response with TIA up to high input power of +5.8 dBm.