材料科学
自旋电子学
铁磁性
凝聚态物理
磁各向异性
过渡金属
磁矩
磁圆二色性
外延
纳米技术
光电子学
磁场
图层(电子)
磁化
化学
量子力学
物理
催化作用
生物化学
谱线
天文
作者
Wen Zhang,Ping Kwan Johnny Wong,Xiaochao Zhou,Ashutosh Rath,Zhaocong Huang,Hongyu Wang,Simon A. Morton,Jiaren Yuan,Lei Zhang,Rebekah Chua,Shengwei Zeng,Er Liu,Feng Xu,Ariando Ariando,Daniel H. C. Chua,Yuan Ping Feng,G. van der Laan,Stephen J. Pennycook,Ya Zhai,Andrew Thye Shen Wee
出处
期刊:ACS Nano
[American Chemical Society]
日期:2019-02-18
被引量:26
标识
DOI:10.1021/acsnano.8b08926
摘要
Ferromagnet/two-dimensional transition-metal dichalcogenide (FM/2D TMD) interfaces provide attractive opportunities to push magnetic information storage to the atomically thin limit. Existing work has focused on FMs contacted with mechanically exfoliated or chemically vapor-deposition-grown TMDs, where clean interfaces cannot be guaranteed. Here, we report a reliable way to achieve contamination-free interfaces between ferromagnetic CoFeB and molecular-beam epitaxial MoSe2. We show a spin reorientation arising from the interface, leading to a perpendicular magnetic anisotropy (PMA), and reveal the CoFeB/2D MoSe2 interface allowing for the PMA development in a broader CoFeB thickness-range than common systems such as CoFeB/MgO. Using X-ray magnetic circular dichroism analysis, we attribute generation of this PMA to interfacial d–d hybridization and deduce a general rule to enhance its magnitude. We also demonstrate favorable magnetic softness and considerable magnetic moment preserved at the interface and theoretically predict the interfacial band matching for spin filtering. Our work highlights the CoFeB/2D MoSe2 interface as a promising platform for examination of TMD-based spintronic applications and might stimulate further development with other combinations of FM/2D TMD interfaces.
科研通智能强力驱动
Strongly Powered by AbleSci AI