Inductively coupled plasma etching of InP using N2/H2

Inductively coupled plasma etching of InP in N2/H2 is demonstrated. The dependence of etch rates on N2/H2 composition, radio frequency power and etching pressure is presented. An optimized process is developed and shown to be suitable for the slow, well-controlled, etching of InP-based nanostructures, while yielding excellent surface morphology.