超导电性
分子束外延
砷化镓
铝
溅射
镓
材料科学
转变温度
凝聚态物理
薄膜
砷化物
化学
外延
冶金
光电子学
纳米技术
物理
图层(电子)
作者
K. Yu. Arutyunov,E. A. Sedov,V. V. Zavialov,А. Ставринидис,Г. Ставринидис,Z. Chatzopoulos,A. Adikimenakis,G. Konstantinidis,Nikoletta Florini,Polyxeni Chatzopoulou,Th. Kehagias,G. P. Dimitrakopulos,Ph. Komninou
标识
DOI:10.1134/s0031918x22602025
摘要
The R(T) dependences of thin superconducting aluminum films deposited on leucosapphire and gallium arsenide substrates by electron beam sputtering and molecular beam epitaxy have been experimentally studied. Regardless of morphology, a noticeable increase in the critical temperature of the superconducting transition with a decrease in the film thickness is found. The effect is interpreted as a manifestation of the quantum size effect.
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