兴奋剂
费米能级
氧化锡
密度泛函理论
离子键合
带隙
卤素
锡
氟
态密度
吸收(声学)
分析化学(期刊)
物理
材料科学
光电子学
凝聚态物理
光学
离子
化学
有机化学
冶金
电子
烷基
量子力学
作者
Fadhel Ben Cheikh Larbi,S. Bourahla,S. Kouadri Moustefaï,F. Elagra
标识
DOI:10.1139/cjp-2022-0295
摘要
In this work, we carried out in-depth study of the structural, electronic, and optical properties of intrinsic, fluorine (F)- and chlorine (Cl)-doped SnO 2 , using a pseudo-potential plane-wave scheme in the framework of the density functional theory. We found that the substitution of oxygen by F or Cl elements slightly modified the crystalline parameters without altering the stability of SnO 2 compounds. The doping of tin oxide by these two halogens is confirmed by the displacement of the Fermi level position to the conduction band. Consequently, the doped materials are strongly degenerated as illustrated by the Moss-Burstein shift: 2.310 and 2.332 eV for F:SnO 2 and Cl:SnO 2 , respectively. On the other hand, the density of states and Mulliken population analysis show that the covalent character of Sn–O bond is maintained after doping, while Sn–X (X = F or Cl) bond reveals an ionic nature. In terms of optical properties after doping, intrinsic SnO 2 exhibits low absorption, while the doped ones are transparent in the visible range, making them more efficient in photovoltaic applications. Moreover, in the ultraviolet (UV) scale, pure and doped tin oxide compounds show better absorption, which may be beneficial for use in devices of protection against UV light and UV absorbers or sensors. Finally, the plasma frequencies of 28.22, 29.16, and 27.67 eV for pure, F-, and Cl-doped SnO 2 , respectively, were obtained.
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