包对包
四平无引线包
德拉姆
堆积
芯片级封装
材料科学
球栅阵列
成套系统
计算机科学
电子工程
工程制图
工程类
复合材料
炸薯条
光电子学
胶粘剂
图层(电子)
晶片切割
焊接
电信
物理
核磁共振
薄脆饼
作者
Ken Zhang,Vito Lin,Teny Shih,Andrew H. Kang,Yu-Po Wang
标识
DOI:10.23919/icep58572.2023.10129706
摘要
Compared with HBWPOP (High Bandwidth Package on Package), a FOPOP (Fan Out Package on Package) which adopts RDL structure to replace traditional substrate has the advantages of thin package profile, high electric al and thermal performance…etc. And it has been used as high-end AP for smartphone in recent years. But package warpage control for the FOPOP is becoming more challenges than general package due to thinner package thickness. Poor package warpage will impact quality results of SMT and stacking DRAM. Thus, a 15x15 mm package size without DRAM pre-stacking is studied in this paper. Various structural factors includes die thickness, Cu stud height, top and bottom RDL thickness that will impact package warpage performance were simulated and analyzed. Simulation and analysis results showed that top and bottom RDL thickness are significant factors affecting package warpage. Moreover, an optimized FOPOP structure was proposed and assembled actually. Then its package warpage was measured by shadow moiré and compared with simulation results. Both results includes warpage values and contours were simulation and meet warpage requirement.
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