神经形态工程学
记忆电阻器
铁电性
材料科学
人工神经网络
极化(电化学)
光电子学
纳米技术
计算机科学
人工智能
电子工程
工程类
化学
电介质
物理化学
作者
Shijie Dong,Hao Líu,Yan Wang,Jialin Bian,Jie Su
标识
DOI:10.1021/acsami.4c01489
摘要
The ability of ferroelectric memristors to modulate conductance and offer multilevel storage has garnered significant attention in the realm of artificial synapses. On one hand, the resistance change of ferroelectric memristors mainly depends on the polarization reversal. On the other hand, the defects such as oxygen vacancies, which are inevitable presence during high-temperature processes, can undergo diffusion drift with the polarization reversal, thereby change the interface potential barrier. Thus, it is both desirable and necessary to investigate the synergistic effect of ferroelectricity and defects. Here, we prepare BaTiO3 ferroelectric memristor by pulse laser deposition and achieve resistance switching through the synergistic effect of ferroelectricity and oxygen vacancies. The memristor shows excellent switching characteristics with a large switching ratio (104) and good stability (103 s). It effectively emulates the features of artificial synapses and accomplishes decimal logical neural computing. In the neuromorphic system crafted with the memristor, the recognition accuracy of the 28 × 28 pixel image reaches 94.9%. These findings strongly support the research of ferroelectric memristors in neuromorphic devices.
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