深能级瞬态光谱
载流子
载流子寿命
材料科学
重组
光电子学
半导体
光谱学
电子
原子物理学
化学
硅
物理
生物化学
量子力学
基因
作者
Tomohiko Hara,Yoshio Ohshita
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2022-09-01
卷期号:12 (9)
被引量:2
摘要
This paper proposes a new double carrier pulse deep-level transient spectroscopy (DC-DLTS) method that is applicable for evaluating metal–insulator–semiconductor (MIS) structures and the recombination centers in carrier-selective contact solar cells. Specifically, this study evaluated recombination characteristics of defects induced in bulk Si near SiO2/Si interfaces by reactive plasma deposition (RPD). In this method, a pulse voltage was first applied to inject majority carriers. Subsequently, a second pulse voltage was applied, which allowed minority carriers to be injected into the MIS structure. With these two types of carrier injections, carriers were recombined in recombination-active defects, and the DC-DLTS spectrum changed. During the injection of minority carriers, some majority carriers were thermally emitted from the defects, resulting in a decrease in the signal intensity. The recombination activity was analyzed by considering the effect of thermal emission on the change in signal intensity. The number of induced defect types and defect properties were estimated using Bayesian optimization. According to the results, three types of electron traps were generated using the RPD process. Based on the DC-DLTS results, defects with energy level 0.57 eV below the conduction band and capture cross section of ∼10−15 cm2 act as recombination centers.
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