开路电压
锑
太阳能电池
材料科学
电压
短路
硫化物
光电子学
薄膜
电气工程
纳米技术
冶金
工程类
作者
Xiaoqi Peng,Junjie Yang,Qi Zhao,Huihui Gao,Yuqian Huang,Haolin Wang,Changfei Zhu,Rongfeng Tang,Tao Chen
摘要
Herein, we developed a new sulfurization method to obtain S-rich Sb 2 S 3 , which passivated the internal deep-level defects of the film. Finally, a record open-circuit voltage of 805 mV was achieved, which is the highest value for Sb 2 S 3 solar cells.
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