镓
兴奋剂
材料科学
电阻率和电导率
共发射极
光电子学
太阳能电池
电气工程
冶金
工程类
作者
Huayun Ge,Xing Li,Chunlin Guo,Wei Luo,Rui Jia
出处
期刊:Energies
[MDPI AG]
日期:2023-03-14
卷期号:16 (6): 2699-2699
摘要
Gallium-doped p-type passivated emitter and rear contact (PERC) solar cells, which eliminate light-induced degradation (LID) and reduce the impact of light- and elevated-temperature-induced degradation (LeTID), have completely replaced boron-doped p-type PERC cells. However, in previous experiments, we found hot spots in the center of gallium-doped PERC solar cells. In this study, it was found that gallium-doped PERC cells had uneven resistivity, which caused hot spots brought about by the avalanche breakdown of PN junctions. There were significant hot spots in the center of the tested cells, with an average resistivity of 0.4–0.5 Ωcm and nonuniformity greater than 30%, or at an average resistivity of 0.5–0.6 Ωcm with nonuniformity greater than 40%. In this paper we describe and study in detail hot spots triggered by the uneven resistivity of gallium-doped cells and analyze the causes and related influencing factors, thereby providing guidance and a reference for the improvement of the performance and reliability of gallium-doped PERC solar cells.
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