Anneal Behavior of Total Ionizing Dose Irradiated UTBB FD-SOI n-MOSFETs Activated by Hot Carrier Stress

In this article, anneal behavior of total ionizing dose (TID) irradiated ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) n-MOSFETs activated by hot carrier stress is observed and discussed. Hot carrier experiments applied on TID irradiated and unirradiated devices show that TID-induced positive oxide charges in buried oxide (BOX) can be neutralized by channel hot electrons, while no additional charged traps are generated. By considering the interactions of charged oxygen vacancies and channel hot electrons, the tunneling anneal process assisted by multiphonon emission is proposed.