Voltage-Controlled Bimeron-Torques Switching of In-Plane Magnetization

Controlling the out-of-plane magnetization in nanodevices via electric currents has played a pivotal role in advancing high-impact data storage and nonvolatile logic technologies within spintronic devices. However, the in-plane magnetization materials, which are more accessible than their out-of-plane counterparts, are less favored in terms of switching efficiency and magnetization stability. This is due to their larger switching barriers, resulting in a higher critical switching current in the commonly used spin-transfer torques or spin-orbit torques magnetic random-access memory. Here, we propose the use of voltage-controlled bimeron-torques to switch in-plane magnetization for ultralow energy consumption magnetic random-access memory. In this mechanism, magnetic bimerons act as spin-angular-momentum carriers as well as momentum transfer media rather than that of electrical spin currents in spin-transfer torques or spin-orbit torques. We address the microscopic origin of this mechanism and demonstrate its validity with two examples: Co(MoTe_{2})_{2} and HgInP_{2}O_{6} monolayers, respectively. The mechanism overcomes the restriction of perpendicular magnetization and avoids Joule heating, thereby providing additional pathways for electrical manipulation of magnetic materials.