矫顽力
自旋电子学
磁化
铁磁性
凝聚态物理
材料科学
磁场
物理
量子力学
作者
Gaojie Zhang,Hao Wu,Li Yang,Jin Wen,Bichen Xiao,Wenfeng Zhang,Haixin Chang
标识
DOI:10.1021/acsmaterialslett.3c01090
摘要
The electrical control of coercivity and efficient magnetization switching in 2D ferromagnetic crystals at room temperature are crucial for next-generation 2D spintronics. However, known ferromagnetic systems exhibit limited adjustability of coercivity at room temperature, and electrically induced magnetization switching typically involves a high critical current density and substantial power dissipation. Here, we report the highly tunable coercivity and efficient multistate magnetization switching at room temperature using a single 2D van der Waals (vdW) ferromagnet Fe 3 GaTe 2 . The coercivity can be adjusted to around 98.06% through the current application. Additionally, the critical current density and power dissipation for magnetization switching are impressively low, measuring around 7.31 × 10 5 A·cm –2 and 6.03 × 10 13 W·m –3, respectively. This ultralow power dissipation is 1–5 orders of magnitude lower than that observed in other 2D ferromagnetic systems. Furthermore, multistate magnetization switching is also realized at room temperature. The findings of this study pave the way for electrical control of ferromagnetism at room temperature and the practical implementation of vdW-integrated 2D spintronics.
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