Preparation and transformation of color centers in 4H-SiC by electron irradiation and subsequent annealing

The conversion from V Si to CAV induced by 2 MeV 10 16 e cm −2 was compared with that induced by annealing, and the latter was more thorough. The optimized preparation conditions are: 2 MeV is prone to CAV and 10 MeV corresponding to V Si .