材料科学
兴奋剂
薄膜晶体管
X射线光电子能谱
镨
铟
镓
光电子学
分析化学(期刊)
氧化物
带隙
图层(电子)
纳米技术
化学
核磁共振
冶金
色谱法
物理
作者
Ying Zhu,Hua Xu,Miao Xu,Min Li,Jianhua Zou,Hong Tao,Lei Wang,Junbiao Peng
标识
DOI:10.1002/pssa.202000812
摘要
The performance of praseodymium‐doped indium gallium oxide (PrIGO) as the channel layer of thin‐film transistors (TFTs) is widely investigated. The TFTs with Pr doping exhibit a remarkable suppression of the light‐induced instability including a negligible photoresponse and significant enhancement in negative gate bias stress under illumination (NBITS). The structure, chemical composition, and oxygen vacancy concentration of PrIGO films are analyzed by X‐ray diffraction (XRD) and X‐ray photoelectron spectroscopy (XPS), respectively. In addition, the low‐frequency noise test is introduced to analyze the variation of trap density with Pr doping. The results indicate that the trap states induced by Pr doping facilitate the capture of free electrons by positively charged oxygen vacancies under illumination, which leads to the suppression of photoinduced carriers in the conduction band.
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