Heteroatom doping of 2D graphene materials for electromagnetic interference shielding: a review of recent progress

In recent years, heteroatoms-doped graphene, with its exceptional properties, has generated significant advances in many fields of modern nanoscience and nanotechnology. With the rapid progress in doped graphene research, advanced graphene materials have been developed and frequently used in electromagnetic shielding applications. In this context, heteroatom-doping of graphene materials has been considered as an efficient strategy for the development of novel electromagnetic interference (EMI) shielding materials. This article aims to provide a timely update on the synthesis and EMI shielding applications of doped graphene materials. Heteroatom-doped and co-doped graphene-based materials (n-type and p-type doping) have been synthesized using various chemical and physical routes. Extensive approaches and strategies have been applied for achieving the intended doping/co-doping levels in graphene-based materials. Doping in graphene and its derivatives induces the formation of defects, changing the electrical conductivity as well as the mechanical properties. This results in an increase of reflection, and an improvement of absorption, enhancing shielding effectiveness. This review article provides a comprehensive overview of doping strategies for graphene and related composites, their EMI shielding performance, as well as comments on the future perspectives and possible challenges for doped graphene-based materials. We hope this review article offers a valuable starting point for researchers entering the field, providing an overview of synthesis approaches and EMI shielding applications.