神经形态工程学
记忆电阻器
材料科学
可扩展性
背板
碳化硅
计算机科学
人工智能
电子工程
纳米技术
电气工程
光电子学
人工神经网络
工程类
计算机硬件
数据库
冶金
作者
Lu'an Liu,Jianhui Zhao,Gang Cao,Zheng Shu-Kai,Xiaobing Yan
标识
DOI:10.1002/admt.202100373
摘要
Abstract With the advancement of artificial intelligence technology, more and more biological functions need to be imitated to complete more complex tasks and adapt to a complex external work environment. Memristors, as an excellent candidate for neuromorphic artificial electronic devices with many biological functions, have inspired the interest of researchers because of the advantages of scalability, good retention, and high operating speed. In this work, wide band gap semiconductor materials silicon carbide (SiC) films are prepared as a memristor medium. By adjusting the current compliance, both threshold character and bipolar resistive switching phenomenon are realized in one device with both lower powers for set operation. For the threshold characteristic, this device has mimicked the “threshold,” “inadaptation,” and “relaxation” features of a nociceptor, which will protect the artificial intelligence system to have stronger adaptability to the external environment. For the bipolar resistive switching characteristics, this device demonstrates good stability and retention time, with a switching speed of 18 ns. These bipolar resistance switching characteristics have simulated many synaptic functions. Pulses with hundreds of nanosecond time scale widths are conducive to fast learning and calculation. This device‐based third‐generation SiC semiconductor material will find a broad application in neuromorphic chip systems.
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