8‐2: Low Cost Manufacturing of AlZnO/ZnO Thin Film Transistor with High Mobility Over 80 cm2/Vs and Positive Threshold Voltage by Spray Pyrolysis

We demonstrate the low‐cost AlZnO/ZnO TFT by spray pyrolysis at 350 °C. High field‐effect mobility is achieved over 80 cm 2 /V.s with a subthreshold slope of 123 mV/decade. The higher mobility is due to the 2D like electron gas at the interface of AlZnO/ZnO. The stack TFT shows positive threshold voltage and negligible threshold voltage shift under positive bias stress. The presence of Al‐O at the interface reduces the oxygen vacancies and improves the bias stability.