An Intelligence Programmable Intrathecal Injection System Based on Tween 80‐Confined Halide Perovskite Optoelectronic Memristor

Abstract Lead‐free inorganic perovskites have emerged as promising candidates to replace the lead‐based perovskites and expedite the commercialization of optoelectronic devices, owing to their exceptional optoelectronic properties, tunable bandgap, and long carrier diffusion lengths. However, uncontrollable nucleation and crystal growth of perovskites pose a major challenge to device performance. Herein, a Tween 80‐confined Cs 2 AgBiBr 6 ‐based optoelectronic memristor is presented that exhibits both electronic synaptic functionality (ESF) and transient photoresponse (TPR). The Tween 80 confinement strategy effectively suppresses bromine vacancy (Br vac ) and promotes the formation of a high‐quality, pinhole‐free perovskite film, which endows the device with outstanding optoelectronic performance. Leveraging the ESF under electrical stimulation, the as‐fabricated device achieves highly efficient pattern recognition. Under optical stimulation, it demonstrates a TPR with 20 ms response time, an extended durability of 931.7 s, and excellent repeatability over 1000 cycles at 5 Hz. Furthermore, the device achieves all‐optical writing and erasing through combined optical stimuli, enabling complex image encryption/writing tasks. Finally, an all‐optically controlled intrathecal injection system is designed based on the device, incorporating six specific drug release strategies. Therefore, this work provides innovative insights into the application of optoelectronic memristors in biomedical and life sciences, paving the way for the development of smart medicine.