Studies on primary photocurrent of a-Si:H using xerographic and vidicon techniques

The primary photocurrent of a‐Si:H prepared by glow discharge of SiH4 was investigated with VIDICON and ELECTROPHOTOGRAPHIC techniques. The photoresponse current depends greatly upon the device structures used and an excellent photoconductivity gain of unity is attainable if the leakage current in the dark is excluded. All results in this study can be interpreted in terms of field‐independent efficiency for carrier‐generation in a‐Si:H.