Monolithic integration of Si field emitter arrays with n-MOSFET circuits

To improve the stability and the uniformity of emission currents, we have proposed and fabricated a current-controllable silicon field emitter incorporating a metal-oxide -semiconductor field-effect transistor structure (a MOSFET-structured silicon field emitter). In this device, a built-in MOSFET can control the supply of electrons to the field emitters to stabilize the emission current. The MOSFET-structured emitter is highly compatible with n-MOSFET LSIs in the fabrication processes. Therefore, it is possible to integrate the MOSFET-structured emitter with a driving circuit. We have integrated the Si MOSFET-FEA with n-MOSFET circuits monolithically based on the n-MOSFET process.