Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition

Y 2 O 3 thin films are fabricated on Si (100) wafer by using showerhead type direct PEALD system. The commercial tris (methylcyclopenta dienyl) yttrium ((MeCp 3 ) 3 Y) precursor and oxygen plasma are used as a precursor and as a reactant. The growth rate per cycle is increased slightly from 0.1nm/cycle to 0.13nm/cycle, as the substrate temperature is increased from 175¢ªC to 325¢ªC. The crystallinity and density of Y 2 O 3 thin films are also increased as the substrate temperature is increased. Carbon contaminations and film stoichiometry are improved due to high reactivity of plasma species. Dielectric constants of Y 2 O 3 thin films are in range of 15~17 calculated by capacitance – voltage characteristics.