Deep oxide trench termination structure for super-junction MOSFET

Deep oxide trench isolation with a p-type pillar guard is suggested as the termination structure for a high voltage super-junction (SJ) MOSFET device. With an additional p-type pillar guard, such a structure can result in a trapezoidal field profile in depth along the oxide trench sidewall and the device has improved breakdown voltage limited by an intrinsic super-junction structure.