二硫化钼
材料科学
半导体
钼
图层(电子)
纳米技术
二硫键
生产(经济)
化学工程
冶金
光电子学
工程类
化学
生物化学
经济
宏观经济学
作者
Yi Rang Lim,Jin Kyu Han,Seong Ku Kim,Young Bum Lee,Yeoheung Yoon,Seong Jun Kim,Bok Ki Min,Yooseok Kim,Cheolho Jeon,Sejeong Won,Jae‐Hyun Kim,Wooseok Song,Sung Myung,Sun Sook Lee,Ki‐Seok An,Jongsun Lim
标识
DOI:10.1002/adma.201705270
摘要
Abstract A facile methodology for the large‐scale production of layer‐controlled MoS 2 layers on an inexpensive substrate involving a simple coating of single source precursor with subsequent roll‐to‐roll‐based thermal decomposition is developed. The resulting 50 cm long MoS 2 layers synthesized on Ni foils possess excellent long‐range uniformity and optimum stoichiometry. Moreover, this methodology is promising because it enables simple control of the number of MoS 2 layers by simply adjusting the concentration of (NH 4 ) 2 MoS 4 . Additionally, the capability of the MoS 2 for practical applications in electronic/optoelectronic devices and catalysts for hydrogen evolution reaction is verified. The MoS 2 ‐based field effect transistors exhibit unipolar n‐channel transistor behavior with electron mobility of 0.6 cm 2 V −1 s −1 and an on‐off ratio of ≈10³. The MoS 2 ‐based visible‐light photodetectors are fabricated in order to evaluate their photoelectrical properties, obtaining an 100% yield for active devices with significant photocurrents and extracted photoresponsivity of ≈22 mA W −1 . Moreover, the MoS 2 layers on Ni foils exhibit applicable catalytic activity with observed overpotential of ≈165 mV and a Tafel slope of 133 mV dec −1 . Based on these results, it is envisaged that the cost‐effective methodology will trigger actual industrial applications, as well as novel research related to 2D semiconductor‐based multifaceted applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI